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C3M0021120D 参数 Datasheet PDF下载

C3M0021120D图片预览
型号: C3M0021120D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 10 页 / 807 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
200  
200  
160  
120  
80  
Conditions:  
TJ = -40 °C  
tp = < 200 µs  
Conditions:  
TJ = 25 °C  
tp = < 200 µs  
VGS = 15V  
VGS = 15V  
VGS = 13V  
VGS = 13V  
160  
120  
80  
40  
0
VGS = 11V  
VGS = 11V  
VGS = 9V  
VGS = 9V  
40  
VGS = 7V  
VGS = 7V  
0
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
Drain-Source Voltage, VDS (V)  
Drain-Source Voltage, VDS (V)  
Figure 1. Output Characteristics TJ = -40 ºC  
Figure 2. Output Characteristics TJ = 25 ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
200  
160  
120  
80  
Conditions:  
TJ = 175 °C  
tp = < 200 µs  
Conditions:  
IDS = 50 A  
VGS = 15 V  
tp < 200 µs  
VGS = 15V  
VGS = 13V  
VGS = 11V  
VGS = 9V  
VGS = 7V  
40  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
Junction Temperature, TJ (°C)  
Drain-Source Voltage, VDS (V)  
Figure 3. Output Characteristics TJ = 175 ºC  
Figure 4. Normalized On-Resistance vs. Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
Conditions:  
IDS = 50 A  
tp < 200 µs  
60  
50  
40  
30  
20  
10  
0
Conditions:  
VGS = 15 V  
tp < 200 µs  
TJ = 175 °C  
VGS = 11 V  
VGS = 13 V  
TJ = 25 °C  
TJ = -40 °C  
VGS = 15 V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
200  
Drain-Source Current, IDS (A)  
Junction Temperature, TJ (°C)  
Figure 5. On-Resistance vs. Drain Current  
For Various Temperatures  
Figure 6. On-Resistance vs. Temperature  
For Various Gate Voltage  
3
C3M0021120D Rev. -, 08-2019