Electrical Characteristics (TC = 25˚C unless otherwise specified)
Note
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, ID = 100 μA
2.5
2.0
1
3.6
VDS = VGS, ID = 17.7 mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 17.7 mA, TJ = 175ºC
VDS = 1200 V, VGS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
μA
nA
10
21
38
35
33
250
28.8
VGS = 15 V, VDS = 0 V
14.7
VGS = 15 V, ID = 50 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 15 V, ID = 50 A, TJ = 175ºC
VDS= 20 V, IDS= 50 A
gfs
S
Fig. 7
VDS= 20 V, IDS= 50 A, TJ = 175ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
4818
180
12
VGS = 0 V, VDS = 1000 V
Fig. 17,
18
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 100 KHz
AC
V
= 25 mV
99
μJ
Fig. 16
EON
Turn-On Switching Energy (SiC Diode FWD)
3.05
VDS = 800 V, VGS = -4 V/+15 V, ID = 50 A,
Fig. 26,
29
mJ
RG(ext) = 5Ω, L= 65.7 μH, TJ = 175ºC
EOFF
EON
EOFF
td(on)
tr
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
1.67
4.65
1.58
142
27
VDS = 800 V, VGS = -4 V/+15 V, ID = 50 A,
Fig. 26,
29
mJ
ns
RG(ext) = 5Ω, L= 65.7 μH, TJ = 175ºC
VDD = 800 V, VGS = -4 V/15 V
Rise Time
Fig. 27
RG(ext) = 2.5 Ω, L= 65.7 μH
td(off)
tf
Turn-Off Delay Time
Fall Time
72
25
Timing relative to VDS, Inductive load
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
3.3
51
Ω
f = 1 MHz VAC = 25 mV
VDS = 800 V, VGS = -4 V/15 V
ID = 50 A
54
nC
Fig. 12
Per IEC60747-8-4 pg 21
160
(T = 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.6
V
VGS = -4 V, ISD = 25 A, T = 25 °C
J
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.2
V
A
VGS = -4 V, ISD = 25 A, T = 175 °C
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
90
VGS = -4 V, TC = 25˚C
Note 1
Note 1
200
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
81
879
19
ns
nC
A
VGS = -4 V, ISD = 50 A, VR = 800 V
Note 1
Qrr
Reverse Recovery Charge
Peak Reverse Recovery Current
dif/dt = 1000 A/µs, T = 175 °C
J
Irrm
Thermal Characteristics
Typ.
0.32
40
Test Conditions
Note
Symbol
RθJC
Parameter
Unit
Thermal Resistance from Junction to Case
°C/W
Fig. 21
RθJA
Thermal Resistance From Junction to Ambient
2
C3M0021120D Rev. -, 08-2019
CREE [ CREE, INC ]
