CS51313
Electrical Characteristics: 0˚C < T
A
< 70˚C; 0˚C < T
J
< 125˚C; 9V < V
CC
< 14V;
2.0V DAC Code (V
ID4
= V
ID3
=V
ID2
= V
ID1
= 0, V
ID0
= 1), C
GATE(H)
= C
GATE(L)
= 3.3nF, C
OFF
= 390pF; Unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Line Regulation
Input Threshold
Input Pull-up Resistance
Pull-up Voltage
s
Bandgap Reference Voltage
V
REF
s
GATE(H) and GATE(L)
High Voltage at 100mA
Low Voltage at 100mA
Rise Time
Fall Time
GATE(H) to GATE(L) Delay
GATE(L) to GATE(H) Delay
GATE pull-down
s
Overcurrent Protection
OVC Comparator Offset Voltage
Discharge Threshold Voltage
V
OUT
Bias Current
OVC Latch Discharge Current
s
PWM Comparator
PWM Comparator Offset Voltage
Transient Response
s
C
OFF
Off-Time
Charge Current
Discharge Current
s
Power-Good Output
PWRGD Sink Current
PWRGD Upper Threshold
PWRGD Lower Threshold
PWRGD Output Low Voltage
9V
≤
V
CC
≤
14V
V
ID4
, V
ID3
, V
ID2
, V
ID1
, V
ID0
V
ID4
, V
ID3
, V
ID2
, V
ID1
, V
ID0
1.00
25
5.48
0.01
1.25
50
5.65
2.40
100
5.82
%/V
V
kΩ
V
I
VREF
= 10µA sourcing,V
CC
= 12V
1.211
1.230
1.248
V
Measure V
CC
–GATE(L)/(H)
Measure GATE(L)/H
1.6V < GATE(H)/(L) < (V
CC
– 2.5V)
(V
CC
– 2.5V) > GATE(L)/(H) > 1.6V
GATE(H)<2V, GATE(L)>2V
V
CC
= 12V
GATE(L)<2V, GATE(H)>2V
V
CC
= 12V
Resistance to Gnd (Note 3)
30
30
20
1.2
1.0
40
40
65
65
50
2.1
1.5
80
80
110
110
115
V
V
ns
ns
ns
ns
kΩ
0V
≤
V
OUT
≤
3.5V
0.2V
≤
V
OUT
≤
3.5V
V
COMP
= 1V
77
0.2
-7.0
100
86
0.25
0.1
800
101
0.3
7.0
2500
mV
V
µA
µA
0V
≤
V
FB
≤
3.5V
V
FB
= 0 to 3.5V
0.99
1.10
200
1.23
300
V
ns
1.0
V
COFF
= 1.5V
V
COFF
= 1.5V
1.6
550
25
2.3
µs
µA
mA
V
FB
= 1.7V, V
PWRGD
= 1V
% of nominal DAC code
% of nominal DAC code
V
FB
= 1.7V, I
PWRGD
= 500uA
0.5
5
-12
4
8.5
-8.5
0.2
15
12
-5
0.3
mA
%
%
V
s
Overvoltage Protection (OVP) Output
OVP Source Current
OVP Threshold
OVP Pull-up Voltage
OVP = 1V
% of nominal DAC code
I
OVP
= 1mA, V
CC
- V
OVP
1
5
10
8.5
1.1
25
12
1.5
mA
%
V
4
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
