CEP75N10/CEB75N10
30
25
20
15
10
5
140
VGS=10,9,8,7,6V
25 C
V
GS=5V
105
70
TJ=125 C
35
V
GS=4V
-55 C
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.6
2.2
1.8
1.4
1.0
0.6
0.2
4800
4000
3200
2400
1600
800
ID=25A
VGS=10V
C
iss
C
oss
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
