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CEP75N10 参数 Datasheet PDF下载

CEP75N10图片预览
型号: CEP75N10
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 399 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEP75N10的Datasheet PDF文件第1页浏览型号CEP75N10的Datasheet PDF文件第2页浏览型号CEP75N10的Datasheet PDF文件第4页  
CEP75N10/CEB75N10  
30  
25  
20  
15  
10  
5
140  
VGS=10,9,8,7,6V  
25 C  
V
GS=5V  
105  
70  
TJ=125 C  
35  
V
GS=4V  
-55 C  
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
4800  
4000  
3200  
2400  
1600  
800  
ID=25A  
VGS=10V  
C
iss  
C
oss  
C
rss  
0
0
5
10  
15  
20  
25  
-100  
-50  
0
50  
100  
150  
200  
VDS, Drain-to-Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 3. Capacitance  
Figure 4. On-Resistance Variation  
with Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VDS=VGS  
ID=250µA  
V
GS=0V  
101  
100  
10-1  
-50 -25  
0
25 50 75 100 125 150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ, Junction Temperature( C)  
VSD, Body Diode Forward Voltage (V)  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
3