CEP75N10/CEB75N10
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 72A, RDS(ON) = 13mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
100
V
V
A
Gate-Source Voltage
VGS
±20
72
Drain Current-Continuous @ TC = 25 C
Drain Current-Continuous @ TC = 100 C
Drain Current-Pulsed a
ID
51
A
A
IDM
PD
250
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
100
W
0.66
152
W/ C
mJ
A
EAS
IAS
40
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
1.5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 1. 2010.May
http://www.cetsemi.com
1
CET [ CHINO-EXCEL TECHNOLOGY ]
