欢迎访问ic37.com |
会员登录 免费注册
发布采购

CEP75N10 参数 Datasheet PDF下载

CEP75N10图片预览
型号: CEP75N10
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 399 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEP75N10的Datasheet PDF文件第2页浏览型号CEP75N10的Datasheet PDF文件第3页浏览型号CEP75N10的Datasheet PDF文件第4页  
CEP75N10/CEB75N10  
PRELIMINARY  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
100V, 72A, RDS(ON) = 13m@VGS = 10V.  
Super high dense cell design for extremely low RDS(ON)  
High power and current handing capability.  
Lead free product is acquired.  
.
D
TO-220 & TO-263 package.  
G
CEB SERIES  
TO-263(DD-PAK)  
CEP SERIES  
TO-220  
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted  
c
Parameter  
Symbol  
Limit  
Units  
Drain-Source Voltage  
VDS  
100  
V
V
A
Gate-Source Voltage  
VGS  
±20  
72  
Drain Current-Continuous @ TC = 25 C  
Drain Current-Continuous @ TC = 100 C  
Drain Current-Pulsed a  
ID  
51  
A
A
IDM  
PD  
250  
Maximum Power Dissipation @ TC = 25 C  
- Derate above 25 C  
Single Pulsed Avalanche Energy d  
Single Pulsed Avalanche Current d  
Operating and Store Temperature Range  
100  
W
0.66  
152  
W/ C  
mJ  
A
EAS  
IAS  
40  
TJ,Tstg  
-55 to 175  
C
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Limit  
1.5  
Units  
C/W  
C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
RθJA  
62.5  
This is preliminary information on a new product in development now .  
Details are subject to change without notice .  
Rev 1. 2010.May  
http://www.cetsemi.com  
1