CEP75N10/CEB75N10
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 25A
2
4
V
Static Drain-Source
10
13
mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance
gFS
Ciss
Coss
Crss
VDS = 25V, ID = 25A
S
21
Input Capacitance
pF
pF
pF
3310
280
135
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
27
12
65
17
54
24
td(on)
tr
td(off)
tf
ns
ns
VDD = 50V, ID = 30A,
VGS = 10V, RGEN = 5.6Ω
Turn-Off Delay Time
Turn-Off Fall Time
ns
130
34
ns
Total Gate Charge
Qg
nC
nC
nC
72
94
VDS = 80V, ID = 70A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
13
30
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
Notes :
IS
72
A
V
VSD
VGS = 0V, IS = 25A
1.3
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 190µH, I = 40A, V = 24V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
2