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50S116T 参数 Datasheet PDF下载

50S116T图片预览
型号: 50S116T
PDF下载: 下载PDF文件 查看货源
内容描述: SDRAM ( 512K ×2组X 16位SDRAM ) [SDRAM(512K X 2 BANKS X 16 BITS SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 42 页 / 1289 K
品牌: CERAMATE [ CERAMATE TECHNICAL ]
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50S116T  
SDRAM  
Notes:  
1. Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the  
devices.  
2. All voltages are referenced to VSS  
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the  
minimum values of tCK and tRC.  
4. These parameters depend on the output loading conditions. Specified values are obtained with  
output open.  
5. Power-up sequence is further described in the "Functional Description" section.  
6. AC test conditions.  
PARAMETER  
Output Reference Level  
CONDITIONS  
1.4V/1.4V  
See diagram below  
2.4V/0.4V  
2 nS  
Output Load  
Input Signal Levels  
Transition Time (Rise and Fall) of Input Signal  
Input Reference Level  
1.4V  
1.4 V  
50 ohms  
30pF  
output  
Z = 50 ohms  
AC TEST LOAD  
7. Transition times are measured between VIH and VIL.  
8. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to  
output level.  
* All specs and applications shown above subject to change without prior notice.  
1F-5 NO.66 SEC.2 NAN-KAN RD ., LUCHU , TAOYUAN, TAIWAN, R.O.C  
Tel:886-3-3214525  
Email: server@ceramate.com.tw  
Http: www.ceramate.com.tw  
Rev 1.0 Aug.20,2002  
Page 16 of 42  
Fax:886-3-3521052  
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