PRELIMINARY
CM3202-02
DDR VDDQ and VTT Termination Voltage Regulator
Features
•
Two linear regulators
-Maximum 2A current from VDDQ
-Source and sink up to 2A VTT current
1.7V to 2.8V adjustable VDDQ output voltage
0.85V to 1.4V VTT output voltage (tracking at 50% of
VDDQ)
500mV typical VDDQ dropout voltage at 2A
Excellent load and line regulation, low noise
Meet JEDEC DDR-I and DDR-II memory power spec
Linear regulator design requires no inductors and has
low external component count
Integrated power MOSFETs
Dual purpose ADJ/Shutdown pin
Built-in over-current limit and thermal shutdown for V
DDQ
and V
TT
Fast transient response
Low quiescent current
TDFN-8 RoHS compliant lead-free package
SOIC-8 RoHS compliant lead-free package
Product Description
T
he CM3202-02 is a dual-output low noise linear
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regulator designed to meet SSTL-2 and SSTL-3
specifications for DDR-SDRAM V
DDQ
supply and
termination voltage V
TT
supply. With integrated power
MOSFETs the CM3202-02 can source up to 2A of
VDDQ continuous current, and source or sink up to 2A
VTT continuous current. The typical dropout voltage for
VDDQ is 500mV at 2A load current.
The CM3202-02 provides excellent full load regulation
and fast response to transient load changes. It also has
built-in over-current limits and thermal shutdown at
170°C.
The CM3202-02 supports Suspend-To-RAM (STR)
and ACPI compliance with Shutdown Mode which tri-
states VTT to minimize quiescent system current.
The CM3202-02 is available in a space saving TDFN-8
and SOIC-8 surface mount packages. Low thermal
resistance allows them to withstand high power
dissipation at 85°C ambient. The CM3202-02 can
operate over the industrial ambient temperature range
of –40°C to 85°C.
Applications
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DDR memory and active termination buses
Desktop computers, servers
Residential and enterprise gateways
DSL modems
Routers and switches
DVD recorders
3D AGP cards
LCD TV and STB
Typical Application
V
IN
= 3.0V to 3.6V
V
DDQ
= 2.5V/2A
C
IN
220μF/
/
10V
1
2
V
TT
= 1.25V/2A
220μF/
10V
C
TT
4.7μF/
10V
cer
3
4.7μF/10V
cer
220μF/
10V
VDDQ
ADJSD
8
7
6
5
S/D
R2
10k
R1
10k
C
DDQ
4.7μF/10V, cer
VDDQ
DL0
RT0
DLn
RTn
VDDQ
VIN
NC
VTT
C hip
S et
CM3202-02
GND
GND
4 NC
REF
Memory
DDR
VTT
1. 25V , 2.5A
R
f
V
REF
C
f
1μF/10V
cer
51
© 2007 California Micro Devices Corp. All rights reserved.
05/25/07
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
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Tel: 408.263.3214
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Fax: 408.263.7846
●
www.cmd.com
1
CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
