Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-ADJ Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VREF
×98.5%
VREF
×101.5%
Reference Voltage
VREF
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
0.8
V
Input Voltage
VIN
6.0
V
A
Maximum Output Current
IOUT(MAX)
VIN=2.5V, VOUT= 0.788V to 0.812V
1
△VOUT/VOUT
△IOUT
Load Regulation
VIN=2.5V, 1mA ≤ IOUT ≤1A
0.2
1
%/A
△VOUT/VOUT
△VIN
Line Regulation
2.5V≤VIN≤6V, IOUT=30mA
-0.1
0.02
60
0.1
75
%/V
Quiescent Current
IQ
VIN=2.5V, IOUT=0mA
μA
f=100Hz
f=1KHz
68
Ripple 1Vp-p
VIN=2.5V,
Power Supply Rejection
Ratio
PSRR
dB
I
OUT=100mA
68
Output Voltage
Temperature Coefficient
△VOUT/VOUT
△T
ppm/°C
mA
±30
50
IOUT=30mA, TA =-40°C to 85°C
VOUT=0V
Short Current Limit
ISHORT
RMS Output Noise
VNOISE
10Hz ≤ f ≤100kHz (No Load)
30
μVRMS
VEN High Voltage
VEN Low Voltage
Standby Current
VIH
VIL
Enable logic high, regulator on
Enable logic low, regulator off
VIN=2.5V, VEN in OFF mode
No Load
1.5
V
0.4
1.0
ISTD
tS
0.01
20
μA
μs
Start-up Time
EN Pull Down Resistor
RPD
3.0
60
MΩ
Ω
VOUT Discharge Resistor
RDCHG
TOTSD
Set EN pin at Low
Thermal
Temperature
Thermal
Shutdown
Shutdown
160
°C
THYOTSD
25
Hysteresis
SOIC-8
PSOP-8
74.6
43.7
Thermal Resistance
(Junction to Case)
°C/W
θJC
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013 Rev. 2. 2
BCD Semiconductor Manufacturing Limited
13
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
