Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-1.8 Electrical Characteristics (Note 2)
(VIN=2.8V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
VOUT
×98.5%
VOUT
1.8
Output Voltage
VOUT
VIN =2.8V, 1mA ≤ IOUT ≤ 30mA
V
×101.5%
Maximum Output Current
Load Regulation
IOUT(MAX)
VIN=2.8V, VOUT=1.773V to 1.827V
VIN=2.8V, 1mA ≤ IOUT ≤1A
2.8V≤VIN≤6V, IOUT=30mA
IOUT=1.0A
1.0
A
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
0.2
0.02
500
60
1.0
0.1
700
75
%/A
%/V
mV
μA
Line Regulation
-0.1
Dropout Voltage
VDROP
IQ
Quiescent Current
VIN=2.8V, IOUT=0mA
f=100Hz
f=1KHz
68
68
Ripple 1Vp-p
VIN=2.8V,
Power Supply Rejection
Ratio
PSRR
dB
I
OUT=100mA
Output Voltage
Temperature Coefficient
△VOUT/VOUT
△T
ppm/°C
mA
±30
50
IOUT=30mA, TA =-40°C to 85°C
VOUT=0V
Short Current Limit
RMS Output Noise
VEN High Voltage
VEN Low Voltage
Standby Current
ISHORT
VNOISE
VIH
10Hz ≤ f ≤100kHz (No load)
Enable logic high, regulator on
Enable logic low, regulator off
VIN=2.8V, VEN in OFF mode
No Load
30
μVRMS
1.5
V
VIL
0.4
1.0
ISTD
0.01
20
μA
μs
Start-up Time
tS
EN Pull Down Resistor
RPD
3.0
60
MΩ
Ω
VOUT Discharge Resistor
RDCHG
TOTSD
Set EN pin at Low
Thermal
Temperature
Thermal
Shutdown
Shutdown
160
°C
THYOTSD
25
Hysteresis
SOIC-8
74.6
43.7
50.9
35
PSOP-8
Thermal Resistance
(Junction to Case)
°C /W
θJC
SOT-223
TO-252-2 (1) /(3) /(4)
TO-263-3
22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013 Rev. 2. 2
BCD Semiconductor Manufacturing Limited
10
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
