Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Electrical Characteristics (Continued)
AP2114-2.5 Electrical Characteristics (Note 2)
(VIN=3.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC
ranges, unless otherwise specified (Note 3))
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
VOUT
×98.5%
VOUT
×101.5%
Output Voltage
VOUT
VIN =3.5V, 1mA ≤ IOUT ≤ 30mA
2.5
V
Maximum Output Current
Load Regulation
IOUT(MAX)
VIN=3.5V, VOUT=2.463V to 2.537V
1.0
A
△VOUT/VOUT
△IOUT
Vout=2.5V, VIN=Vout+1V
1mA ≤ IOUT ≤1A
0.2
1.0
0.1
%/A
△VOUT/VOUT
△VIN
Line Regulation
3.5V≤VIN≤6V, IOUT=30mA
-0.1
0.02
%/V
Dropout Voltage
Quiescent Current
VDROP
IQ
IOUT =1A
450
60
750
80
mV
VIN=3.5V, IOUT=0mA
μA
Ripple 1Vp-p
VIN=3.5V,
IOUT=100mA
f=100Hz
f=1KHz
65
Power Supply Rejection
Ratio
PSRR
dB
65
Output Voltage
Temperature Coefficient
△VOUT/VOUT
△T
IOUT=30mA
ppm/°C
mA
±30
50
Short Current Limit
RMS Output Noise
VEN High Voltage
VEN Low Voltage
Standby Current
ISHORT
VNOISE
VIH
VOUT=0V
10Hz ≤ f ≤100kHz
30
μVRMS
Enable logic high, regulator on
Enable logic low, regulator off
VIN=3.5V, VEN in OFF mode
No Load
1.5
V
VIL
0.4
1.0
ISTD
0.01
20
μA
μs
Start-up Time
tS
EN Pull Down Resistor
VOUT Discharge Resistor
RPD
3.0
60
MΩ
Ω
RDCHG
TOTSD
Set EN pin at Low
Thermal
Shutdown
160
Temperature
Thermal
°C
Shutdown
THYOTSD
25
Hysteresis
SOIC-8
74.6
43.7
50.9
35
PSOP-8
Thermal Resistance
(Junction to Case)
SOT-223
°C /W
θJC
TO-252-2 (1) /(3) /(4)
TO-263-3
22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2013 Rev. 2. 2
BCD Semiconductor Manufacturing Limited
11
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
