Electrical Characteristics of TD-SCDMA PA
Unless Otherwise Specified: f=2010-2025MHz, Vdd1=Vdd3=3.5V, Vdd2=2.85V, Vctrl=2.0V, Pout=28.0dBm,
Ta=25°C, Zin/Zout = 50Ω
Parameter
min
typ
Max
Units
Leakage Current, Idd1,2,3; Vctrl=0 V, RF Off
20
80
uA
Control Current, Ictrl; Vctrl=2.0 V
75
110
6
145
10
uA
Bias Current, Idd2; Vctrl=2 V, Vdd2=2.85 V
Quiescent Current, Idd1,3; RF Off Vctrl=2.0 V
mA
mA
50
80
At Pout=28.0dBm
Supply current Idd1+Idd3
PAE including Vdd1,2,3
Gain
435
41
480
mA
%
36
25.5
28.5
1.1
32
dB
-
Input VSWR
2.0:1
ACLR
1.6MHz offset
-40
-54
-50
-60
3.1
-35
-48
-40
-45
4.1
-60
dBc/1.28MHz
dBc/1.28MHz
dBc/1MHz
dBc/1MHz
dB
3.2MHz offset
2nd Harmonic
3rd Harmonic
Noise Figure
Stability, no spurious under conditions:
VSWR=4:1, all phases
3<Vdd<4.5, -50 dBm to 28.0 dBm
dBc
At Pout=16dBm
Supply current Idd1+Idd3
PAE including Vdd1,2,3
Gain
120
9.0
28
145
mA
%
dB
-
Input VSWR
ACLR
1.1
1.6MHz offset
3.2MHz offset
-42
-55
-35
-49
dBc/1.28MHz
dBc/1.28MHz
PA Operation/Shutdown Logic: DC signals
Vctrl
Vdd2
Operational Mode
Shutdown
2.0V typ
2.6 ~ 3.5V
( 2.85V typ)
< 0.2V
0 ~ 4.5 V
4
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
