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SMJ44C251B-12HJM 参数 Datasheet PDF下载

SMJ44C251B-12HJM图片预览
型号: SMJ44C251B-12HJM
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×4 VRAM 256K ×4的DRAM 512K ×4的SAM [256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM]
分类和应用: 内存集成电路动态存储器
文件页数/大小: 57 页 / 1255 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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VRAM  
SMJ44C251B  
MT42C4256  
Austin Semiconductor, Inc.  
FIGURE 23: Block-Write-Cycle Timing (Delayed-Write)  
BLOCK-WRITE-CYCLE STATE TABLE  
STATE  
CYCLE  
1
L
2
L
L
3
4
Write-mask load/use, Block write  
Write Mask Column Mask  
Don't Care Column Mask  
Don't Care Column Mask  
Use previous write mask, Block write  
Write mask disable, Block write to all I/Os  
H
L
H
Write mask data 0: I/O write disable  
1: I/O write enable  
DQ0 — column 0 (addressA1 = 0,A0 = 0)  
DQ1 — column 1 (addressA1 = 0,A0 = 1)  
DQ2 — column 2 (addressA1 = 1,A0 = 0)  
DQ3 — column 3 (addressA1 = 1,A0 = 1)  
Column mask data DQn =  
(n = 0, 1, 2, 3)  
0 column write disable  
1 column write enable  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
SMJ44C251B/MT42C4256  
Rev. 0.1 12/03  
33  
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