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AS8FLC1M32BQT-120/Q 参数 Datasheet PDF下载

AS8FLC1M32BQT-120/Q图片预览
型号: AS8FLC1M32BQT-120/Q
PDF下载: 下载PDF文件 查看货源
内容描述: 全封闭,多芯片模块( MCM ) 32MB, 1M ×32 , 3.0Volt引导块闪存阵列 [Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array]
分类和应用: 闪存
文件页数/大小: 27 页 / 293 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SEMICONDUCTOR, INC.  
FLASH  
AS8FLC1M32  
Austin Semiconductor, Inc.  
Sector Protect / Unprotect Timing Diagram  
V
ID  
IH  
V
RESET#  
SA, A6,  
Valid*  
Valid*  
Valid*  
A1, A0  
Sector Protect/Unprotect  
Verify  
40h  
Data  
60h  
60h  
Status  
Sector Protect: 150 µs  
Sector Unprotect: 15 ms  
1 µs  
CE#  
WE#  
OE#  
Note  
For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.  
Alternate CE# Controlled Erase/Program Operations  
Parameter  
Speed Options  
JEDEC  
Std  
Description  
Write Cycle Time1  
55  
60  
70  
90 Unit  
tAVAV  
tWC  
ns  
ns  
ns  
ns  
ns  
ns  
55  
60  
70  
90  
tAVEL  
tELAX  
tDVEH  
tEHDX  
tAS  
tAH  
Address Setup Time  
Address Hold Time  
Data Setup Time  
0
45  
tDS  
35  
35  
35  
45  
tDH  
tOES  
Data Hold Time  
0
0
Output Enable Setup Time  
Min  
Read Recovery Time Before Write  
High to WE# Low)  
(OE#  
tGHEL  
tGHEL  
0
ns  
tWLEL  
tEHWH  
tELEH  
tEHEL  
tWS  
tWH  
WE# Setup Time  
WE# Hold Time  
0
0
ns  
ns  
ns  
ns  
ns  
tCP  
CE# Pulse Width  
CE# Pulse Width High  
35  
30  
20  
8
tCPH  
tSR/W  
Latency Between Read and Write Operations  
Byte  
Programming Operation2  
Word  
Sector Erase Operation2  
tWHWH1  
tWHWH2  
tWHWH1  
tWHWH2  
µs  
Typ  
16  
1
sec  
Notes:  
1. Not 100% Tested  
2. See Erase and Programming Performance  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8FLC1M32B  
Rev. 3.3 05/08  
23  
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