欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS8FLC1M32BQT-120/Q 参数 Datasheet PDF下载

AS8FLC1M32BQT-120/Q图片预览
型号: AS8FLC1M32BQT-120/Q
PDF下载: 下载PDF文件 查看货源
内容描述: 全封闭,多芯片模块( MCM ) 32MB, 1M ×32 , 3.0Volt引导块闪存阵列 [Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array]
分类和应用: 闪存
文件页数/大小: 27 页 / 293 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
 浏览型号AS8FLC1M32BQT-120/Q的Datasheet PDF文件第18页浏览型号AS8FLC1M32BQT-120/Q的Datasheet PDF文件第19页浏览型号AS8FLC1M32BQT-120/Q的Datasheet PDF文件第20页浏览型号AS8FLC1M32BQT-120/Q的Datasheet PDF文件第21页浏览型号AS8FLC1M32BQT-120/Q的Datasheet PDF文件第23页浏览型号AS8FLC1M32BQT-120/Q的Datasheet PDF文件第24页浏览型号AS8FLC1M32BQT-120/Q的Datasheet PDF文件第25页浏览型号AS8FLC1M32BQT-120/Q的Datasheet PDF文件第26页  
SEMICONDUCTOR, INC.  
FLASH  
AS8FLC1M32  
Austin Semiconductor, Inc.  
DQ2 vs. DQ6  
Enter  
Embedded  
Erasing  
Erase  
Suspend  
Enter Erase  
Suspend Program  
Erase  
Resume  
Erase  
Erase Suspend  
Read  
Erase  
Suspend  
Program  
Erase  
Complete  
WE#  
Erase  
Erase Suspend  
Read  
DQ6  
DQ2  
Note  
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector.  
Temporary Sector Unprotect  
Parameter  
JEDEC  
Std  
Description  
VID Rise and Fall Time 1  
All Speed Options  
Unit  
tVIDR  
Min  
Min  
ns  
500  
RESET# Setup Time for  
tRSP  
4
µs  
Temporary Sector Unprotect  
Temporary Sector Unprotect Timing Diagram  
12 V  
RESET#  
0 or 3 V  
0 or 3 V  
t
t
VIDR  
VIDR  
Program or Erase Command Sequence  
CE#  
WE#  
t
RSP  
RY/BY#  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8FLC1M32B  
Rev. 3.3 05/08  
22  
 复制成功!