FLASH
AS8F128K32
Austin Semiconductor, Inc.
additional sector erase commands can be assumed to be less
than 50 ms, the system need not monitor I/O3*. Any command
during the time-out period resets the device to reading array
data. The system must rewrite the command sequence and any
additional sector addresses and commands.
The system can monitor I/O3* to determine if the sector
erase timer has timed out. (See the “I/O3*: Sector Erase Timer”
section.) The time-out begins from the rising edge of the final
WE# pulse in the command sequence.
Once the sector erase operation has begun, all other
commands are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using I/O7 or I/O6. Refer to “Write Operation
Status” for information on these status bits.
Figure 2 illustrates the algorithm for the erase operation.
Refer to the Erase/Program Operations tables in the “AC
Characteristics” section for parameters, and to the Sector Erase
Operations Timing diagram for timing waveforms.
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which in
turn invokes the Embedded Erase algorithm. The device does
not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any
controls or timings during these operations. The Command
Definitions table shows the address and data requirements for
the chip erase command sequence.
Any commands written to the chip during the Embedded
Erase algorithm are ignored.
The system can determine the status of the erase
operation by using I/O7 or I/O6. See “Write Operation Status”
for information on these status bits. When the Embedded Erase
algorithm is complete, the device returns to reading array data
and addresses are no longer latched.
Figure 2 illustrates the algorithm for the erase operation.
See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to the Chip/Sector Erase
Operation Timings for timing waveforms.
FIGURE 1: Program Operation
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the address of the sector to be
erased, and the sector erase command. The Command Defini-
tions table shows the address and data requirements for the
sector erase command sequence.
The device does not require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm
automatically programs and verifies the sector for an all zero
data pattern prior to electrical erase. The system is not required
to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-
out of 50 ms begins. During the time-out period, additional
sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any sequence,
and the number of sectors may be from one sector to all sectors.
The time between these additional cycles must be less than
50 ms, otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended that
processor interrupts be disabled during this time to ensure all
commands are accepted. The interrupts can be re-enabled after
the last Sector Erase command is written. If the time between
NOTE: See the appropriate Command Definitions table for program
*NOTE: applies to every 8th byte (i.e. I/O3, I/O11, I/O19, I/O27)
command sequence.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8F128K32
Rev. 2.0 5/03
7
AUSTIN [ AUSTIN SEMICONDUCTOR ]
