AS4SD16M72PBG-s/IT,ET,XT
16M x 72, SDR SDRAM, 3.3v Core/ 3.3v IO
DC Electrical Characteristics and Operating Conditions
PARAMETER/CONDITION
Supply Voltage
SYMBOL
VDD
MIN
3.0
MAX
3.6
UNITS
NOTES
V
V
V
V
I/O Supply Voltage
VDDQ
3.0
3.6
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
VIH(DC)
VIL(DC)
2.0
VDD + 0.3
0.8
-0.3
INPUT LEAKAGE (non address)
INPUT LEAKAGE (address)
Any input 0V VIN VDD, VREF
PIN 0V VIN 1.35V
II
II
-5
5
µA
µA
-25
25
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V VOUT VDDQ)
OUTPUT LEVELS:
IOZ
IOH
IOL
-5
5
-
µA
High Current (VOUT = 2.4V
-4.0
4.0
mA
mA
minimum VTT)
Low Current (VOUT = 0.4V,
-
Capacitance
DESCRIPTIONS
CONDITIONS
Sym
Typ
UNITS NOTES
30
pF
pF
pF
pF
Address; A0-A12, BA0, BA1
Input / Output
Ca
12
8
CIO
Cck
CI
TA = 25 C; f = 1Mhz
Clocks; CLKx, CLKx\, CKEx
Input Pins: all other input only
9
Note(s): Power calculated with Ouputs unloaded
Austin Semiconductor, Inc.
Proprietary Material
ASI Product Marketing
AUSTIN [ AUSTIN SEMICONDUCTOR ]
