Meg
16 Me g FPM DRAM
Austin Semiconductor, Inc.
CAPACITANCE
(f = 1MHz ; Vcc = 3.3V ±0.3V)
PARAMETER
Input capacitance (A0 - A11)
Input capacitance (RAS\, CAS\, W\, OE\)
Output capacitance (DQ0 - DQ3)
SYMBOL
C
IN1
C
IN2
C
DQ
MAX
5
7
7
UNITS
pF
pF
pF
AS4LC4M4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
1,2
(-55
o
C<T
A
<+125
o
C & -40
o
C<T
A
<+85
o
C; Vcc = 3.3V ±0.3V; V
IH
/V
IL
= 2.0/0.8V; V
OH
/V
OL
= 2.0/0.8V)
-60
SYMBOL
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
AS4LC4M4
Rev. 0.3 7/06
-70
MAX
MIN
MAX
UNITS
ns
ns
60
15
30
ns
ns
ns
ns
15
50
ns
ns
ns
10K
ns
ns
ns
10K
45
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
PARAMETER
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS\
Access time from CAS\
Access time from column address
CAS\ to output in Low-Z
Output buffer turn-off delay
Transition time (raise and fall)
RAS\ precharge time
RAS\ pulse width
RAS\ hold time
CAS\ hold time
CAS\ pulse width
RAS\ to CAS\ delay time
RAS\ to column address delay time
CAS\ to RAS\ precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS\ lead time
Read command set-up time
Read command hold time referenced to CAS\
Read command hold time referenced to RAS\
Write command hold time
Write command pulse width
Write command to RAS\ lead time
Write command to CAS\ lead time
MIN
110
155
NOTES
3, 4, 10
3, 4, 5
3, 10
3
6
2
0
0
3
40
60
15
60
15
20
15
5
0
10
0
10
30
0
0
0
10
10
15
15
4
10
8
8
4
AUSTIN [ AUSTIN SEMICONDUCTOR ]
