Meg
16 Me g FPM DRAM
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
RAS\
CAS\
W\
Control
Clocks
V
CC
VBB Generator
V
SS
AS4LC4M4
Refresh Timer
Row Decoder
Data In
Buffer
Sense Amps & I/O
Refresh Control
Memory Array
4,194,304 x 4
Cells
Refresh Counter
DQ0
to
DQ3
(A0 - A10)
Row Address Buffer
(A0 - A10)
Col. Address Buffer
Column Decoder
Data Out
Buffer
OE\
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to V
CC
(V
IN
, V
OUT
) ..........-0.5V to +4.6V
Voltage on V
CC
supply relative to V
SS
(V
CC
)................-0.5V to +4.6V
Storage Temperature (T
stg
).........................................-55°C to +150°C
Power Dissipation (P
D
)....................................................................1W
Short Circuit Output Current (I
OS
Address).............................50mA
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability. Junction temperature depends
upon package type, cycle time, loading, ambient temperature
and airflow, and humidity (plastics).
ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C & -40
o
C < T
A
< +85
o
C ; Vcc = 3.3V +0.3V)
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
SYMBOL
V
CC
V
SS
V
IH
V
IL
MIN
3.0
0
2.0
-0.3
2
TYP
3.3
0
---
---
MAX
3.6
0
V
CC
+ 0.3
0.8
1
UNITS
V
V
V
V
NOTES:
1. V
CC
+ .13V/15ns, Pulse width is measured at V
CC
2. -1.3V/15ns, Pulse width is measured at V
SS
AS4LC4M4
Rev. 0.3 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
AUSTIN [ AUSTIN SEMICONDUCTOR ]
