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AS4LC4M16_05 参数 Datasheet PDF下载

AS4LC4M16_05图片预览
型号: AS4LC4M16_05
PDF下载: 下载PDF文件 查看货源
内容描述: 4 MEG ×16 DRAM扩展数据输出( EDO ) DRAM [4 MEG x 16 DRAM Extended Data Out (EDO) DRAM]
分类和应用: 动态存储器
文件页数/大小: 25 页 / 3754 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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DRAM  
AS4LC4M16  
Austin Semiconductor, Inc.  
ICC OPERATING CONDITIONSAND MAXIMUM LIMITS1,2,3,5,6  
(VCC = +3.3V ±0.3V)  
-5  
-6  
PARAMETERS  
STANDBY CURRENT: TTL  
RAS\ = CAS\ = V  
SYM  
MAX  
MAX  
UNITS  
NOTES  
I
1.5  
1
1.5  
1
mA  
CC1  
CC2  
IH  
STANDBY CURRENT: CMOS  
(RAS\ = CAS\ > V - 0.2V; DQs may be left open;  
I
mA  
CC  
Other inputs: V > V - 0.2V or V < 0.2V)  
IN  
CC  
IN  
OPERATING CURRENT: Random READ/WRITE  
Average power supply current  
I
I
I
I
165  
125  
165  
165  
150  
120  
150  
150  
mA  
mA  
mA  
mA  
26  
26  
CC3  
CC4  
CC5  
CC6  
(RAS\, CAS\, address cycling: t = t [MIN])  
RC  
RC  
OPERATING CURRENT: EDO PAGE MODE  
Average power supply current  
(RAS\ = V , CAS\, address cycling: t = t [MIN])  
IL  
PC  
PC  
REFRESH CURRENT: RAS\-ONLY  
Average power supply current  
22  
(RAS\ cycling, CAS\ = V : t = t [MIN])  
IH RC  
RC  
REFRESH CURRENT: CBR  
Average power supply current  
(RAS\, CAS\, address cycling: t = t [MIN])  
4, 7, 23  
RC  
RC  
REFRESH CURRENT: Extended ("S" version only)  
Average power supply current: CAS\ = 0.2V or CBR cycling;  
4, 7,  
23, 37  
I
1
1
1
1
mA  
mA  
CC7  
CC8  
RAS\ = t  
(MIN); WE\ = V - 0.2V; A0 - A10, OE\ and  
CC  
RAS  
D
= V - 0.2V or 0.2V (D may be left open); t = 125µS  
CC IN RC  
IN  
REFRESH CURRENT: Self ("S" version only)  
Average power supply current: CBR with RAS\ > t  
(MIN)  
RASS  
I
4, 7, 37  
and CAS\ held LOW; WE\ = V - 0.2V; A0 - A10, OE\ and  
CC  
D
= V - 0.2V or 0.2V (D may be left open)  
CC IN  
IN  
AS4LC4M16  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 1.1 6/05  
8
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