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AS4LC4M16_05 参数 Datasheet PDF下载

AS4LC4M16_05图片预览
型号: AS4LC4M16_05
PDF下载: 下载PDF文件 查看货源
内容描述: 4 MEG ×16 DRAM扩展数据输出( EDO ) DRAM [4 MEG x 16 DRAM Extended Data Out (EDO) DRAM]
分类和应用: 动态存储器
文件页数/大小: 25 页 / 3754 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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DRAM  
AS4LC4M16  
Austin Semiconductor, Inc.  
AC ELECTRICAL CHARACTERISTICS (Continued)5,6,7,8,9,10,11,12  
(VCC = +3.3V ±0.3V)  
-5  
-6  
MAX UNITS NOTES  
DESCRIPTION  
SYMBOL MIN  
MAX  
MIN  
EDO-PAGE-MODE READ or WRITE cycle time  
EDO-PAGE-MODE READ-WRITE cycle time  
Access time from RAS\  
20  
47  
25  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
ns  
ns  
ns  
ns  
ms  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
34  
34  
tPC  
tPRWC  
tRAC  
tRAD  
tRAH  
tRAS  
tRASP  
tRASS  
tRC  
56  
50  
60  
RAS\ to column-address delay time  
Row address hold time  
9
7
12  
10  
60  
15  
RAS\ pulse width  
50  
50  
80  
84  
11  
0
10,000  
10,000  
RAS\ pulse width (EDO PAGE MODE)  
RAS\ pulse width during Self Refresh  
Random READ or WRITE cycle time  
RAS\ to CAS\ delay time  
125,000* 60 125,000*  
80  
104  
14  
0
14, 28  
16, 30  
28  
tRCD  
tRCH  
tRCS  
tREF  
tREF  
tRP  
READ command hold time (referenced to CAS\)  
READ command setup time  
0
0
Refresh period  
64/24**  
100  
64/24**  
100  
22, 23  
23, 38  
Refresh period ("S" version)  
RAS\ precharge time  
30  
5
40  
5
RAS\ to CAS\ precharge time  
RAS\ precharge time exiting Self Refresh  
READ command hold time (referenced to RAS\)  
RAS\ hold time  
tRPC  
tRPS  
tRRH  
tRSH  
tRWC  
tRWD  
tRWL  
tT  
90  
0
105  
0
16  
35  
13  
116  
67  
13  
2
15  
140  
79  
15  
2
READ-WRITE cycle time  
RAS\ to WE\ delay time  
18  
WRITE command to RAS\ lead time  
Transitioin time (rise or fall)  
25  
12  
25  
15  
WRITE command hold time  
8
10  
45  
0
35  
tWCH  
tWCR  
tWCS  
tWHZ  
tWP  
WRITE command hold time (referenced to RAS\)  
WE\ command setup time  
38  
0
18, 28  
WE\ to outputs in High-Z  
WRITE command pulse width  
WE\ pulse widths to disable outputs  
WE\ hold time (CBR Refresh)  
WE\ setup time (CBR Refresh)  
5
10  
8
5
10  
10  
10  
tWPZ  
tWRH  
tWRP  
8
NOTES:  
*For XT Temp (-55°C to +125°C) tRASP (MAX) = 80,000ns for -5 and -6 speed.  
**64ms Refresh for IT Temp, 24ms Refresh for XT Temp.  
AS4LC4M16  
Rev. 1.1 6/05  
10  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
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