Meg
16 Me g FPM DRAM
Austin Semiconductor, Inc.
AS4C4M4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C & -40
o
C < T
A
< +85
o
C ; Vcc = 5V +10%)
PARAMETER
Input Leakage Current (any input 0<V
IN
<V
IN
+0.5V,
all other input pins not under test = 0 Volt)
Output Leakage Current
(Data out is disabled, 0V<V
OUT
<V
CC
)
Output High Voltage (I
OH
= -5mA)
Output Low Voltage (I
OL
= 4.2mA)
SYMBOL
I
I(L)
I
O(L)
V
OH
V
OL
MIN
-5
-5
2.4
---
MAX
5
5
---
0.4
UNITS
uA
uA
V
V
MAX
SYMBOL
I
CC1
*
I
CC2
I
CC3
*
PARAMETERS
Operating Current (RAS\ and CAS\, Address cycling @ t
RC
= MIN),
Power = Don't Care
Standby Current (RAS\ = CAS\ = W\ = V
IH
)
Power = Normal L
RAS\-only Refresh Current (CAS\ = V
IH
, RAS\, Address cycling @
t
RC
= MIN), Power = Don't Care
Fast Page Mode Current (RAS\ = V
IL
, CAS\, Address cycling @
t
PC
= MIN), Power = Don't Care
Standby Current (RAS\ = CAS\ = W\ = Vcc - 0.2V)
Power = Normal L
CAS\-BEFORE-RAS\ Refresh Current (RAS\ and CAS\ cycling @
t
RC
= MIN), Power = Don't Care
Battery back-up current, Average power supply current, Battery back-
up mode, Input high voltage (V
IH
) = V
CC
- 0.2V, Input low voltage
(V
IL
) = 0.2V, CAS\ = 0.2V, DQ = Don't care, t
RC
= 62.5us (2K/L-ver),
t
RAS
= t
RAS
min ~ 300ns
I
CCS
Self Refresh Current, RAS\ = CAS\ = 0.2V, W\ = OE\ = A0 ~ A11 =
V
CC
- 0.2V or 0.2V, DQ0 ~ DQ3 = V
CC
- 0.2V, 0.2V or Open
1
1
-60
110
3
-70
100
3
UNITS
mA
mA
110
100
mA
I
CC4
*
I
CC5
I
CC6
*
90
2
110
80
2
100
mA
mA
mA
I
CC7
1
1
mA
NOTES:
*I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open. I
CC
is specified as an
average current. In I
CC1
, I
CC3
, and I
CC6
address can be changed maximum once while RAS\ = V
IL
. In I
CC4
, address can be changed maximum once within one
fast page mode cycle time, t
PC
.
AS4C4M4
Rev. 1.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
AUSTIN [ AUSTIN SEMICONDUCTOR ]
