Meg
16 Me g FPM DRAM
Austin Semiconductor, Inc.
4M x 4 CMOS DRAM
WITH FAST PAGE MODE, 5 VOLT
AVAILABLE AS MILITARY
SPECIFICATIONS
•
MIL-STD-883
Vcc
DQ0
DQ1
W\
RAS\
NC
AS4C4M4
PIN ASSIGNMENT
(Top View)
24 Pin TSOP (DG)
1
2
3
4
5
6
24
23
22
21
20
19
Vss
DQ3
DQ2
CAS\
OE\
A9
FEATURES
• Fast Page Mode Operation
• CAS\-before-RAS\ Refresh Capability
• RAS\-only and Hidden Refresh Capability
• Self-refresh Capability
• Fast Parallel Test Mode Capability
• TTL Compatible Inputs and Outputs
• Early Write or Output Enable Controlled Write
• JEDEC Standard Pinout
• Single +5V (±10%) Power Supply
A10
A0
A1
A2
A3
Vcc
7
8
9
10
11
12
18
17
16
15
14
13
A8
A7
A6
A5
A4
Vss
OPTIONS
• Timing
60ns access
70ns access
•
Package
Plastic TSOP, 24-pin
MARKINGS
-6
-7
PIN ASSIGNMENT
PIN
A0 - A10
DQ0 -DQ3
V
SS
FUNCTION
Address Inputs
Data In/Out
Ground
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power (+5V)
No Connect
DG
•
Operating Temperature Ranges
Military (-55
o
C to +125
o
C)
Industrial (-40
o
C to +85
o
C)
XT
IT
RAS\
CAS\
W\
OE\
V
CC
NC
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS4C4M4DG is a
4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering
high speed random access of memory cells within the same
row. This device features a +5V (±10%) power supply,
refresh cycle (2K), and fast access times (60 and 70ns). Other
features include CAS\-before-RAS\, RAS\-only refresh, and
Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM
is fabricated using an advanced CMOS process to realize high
bandwidth, low power consumption and high reliability. It may
be used as main memory for high level computers,
microcomputers and personal computers.
PERFORMANCE RANGE
SPEED
-6
-7
t
RAC
60
70
t
CAC
15
18
t
RC
110
130
t
PC
40
45
UNITS
ns
ns
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS4C4M4
Rev. 1.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
AUSTIN [ AUSTIN SEMICONDUCTOR ]
