FLASH
AS29F010
Austin Semiconductor, Inc.
AC CHARACTERISTICS: Erase and Program Operations
SYMBOL
SPEED OPTIONS
PARAMETER
1
JEDEC Std
-50
-60
-70
90
-120 -150 UNITS
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
MIN
t
t
50
60
70
90
120 150
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
Write Cycle Time
AVAV
WC
0
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
t
t
t
AVEL
AS
AH
DS
DH
t
40
25
45
30
45
30
45
45
50
50
50
50
ELAX
t
t
t
DVEH
EHDX
0
0
0
0
0
t
1
t
Output Enable Setup Time
OES
Read Recover Time Before Write
WE\ Setup Time
t
t
t
GHEL
GHEL
t
WLEL
WS
WE\ Hold Time
t
t
EHWH
WH
CE\ Pulse Width
t
t
25
30
35
45
50
50
ELEH
CP
20
14
15
CE\ Pulse Width High
t
t
EHEL
CPH
2
t t
WHWH1 WHWH1
Byte Programming Operation
2
MAX t
t
WHWH2 WHWH2
Chip/Sector Erase Operation
NOTES:
±. Npa ±00ꢀ aeꢃaed.
2. See ahe “Eꢂrꢃe rnd Pꢂpgꢂrmming Peꢂfpꢂmrnce” ꢃecaipn fpꢂ mpꢂe infpꢂmraipn.
FIGURE 13: AC CHARACTERISTICS, Alternate CE\ Controlled Write
Operation Timings
NOTES:
±. PA = ꢁꢂpgꢂrm rddꢂeꢃꢃ, PD = ꢁꢂpgꢂrm drar, SA = ꢃecapꢂ rddꢂeꢃꢃ, DQ7\ = cpmꢁlemena pf drar inꢁsa, DOUT = rꢂꢂrꢄ drar.
2. Figsꢂe indicraeꢃ ahe lrꢃa aop bsꢃ cꢄcleꢃ pf ahe cpmmrnd ꢃeqsence.
AS29F010
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 2.3 12/08
18
AUSTIN [ AUSTIN SEMICONDUCTOR ]
