FLASH
AS29F010
Austin Semiconductor, Inc.
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
1
2
TYP
1.0
7
MAX
15
UNIT
PARAMETER
COMMENTS
4
Chip/Sector Erase Time
sec
Excludes 00h programming prior to erasure
Byte Programming Time
300
µs
5
Excludes system-level overhead
3
0.9
6.25
sec
Chip Programming Time
NOTES:
±. Tꢄꢁicrl ꢁꢂpgꢂrm rnd eꢂrꢃe aimeꢃ rꢃꢃsme ahe fpllpoing cpndiaipnꢃ: 25°C, 5.0V VCC, ± millipn cꢄcleꢃ. Addiaipnrllꢄ, ꢁꢂpgꢂrmming aꢄꢁicrlꢃ
rꢃꢃsme checkeꢂbprꢂd ꢁraaeꢂn.
2. Undeꢂ opꢂꢃa crꢃe cpndiaipnꢃ pf 90°C, VCC = 4.5V, ±00,000 cꢄcleꢃ.
3. The aꢄꢁicrl chiꢁ ꢁꢂpgꢂrmming aime iꢃ cpnꢃideꢂrblꢄ leꢃꢃ ahrn ahe mrximsm chiꢁ ꢁꢂpgꢂrmming aime liꢃaed, ꢃince mpꢃa bꢄaeꢃ ꢁꢂpgꢂrm frꢃaeꢂ
ahrn ahe mrximsm bꢄae ꢁꢂpgꢂrm aime liꢃaed. If ahe mrximsm bꢄae ꢁꢂpgꢂrm aime given iꢃ exceeded, pnlꢄ ahen dpeꢃ ahe device ꢃea DQ5 = ±.
See ahe ꢃecaipn pn DQ5 fpꢂ fsꢂaheꢂ infpꢂmraipn.
4. In ahe ꢁꢂe-ꢁꢂpgꢂrmming ꢃaeꢁ pf ahe Embedded Eꢂrꢃe rlgpꢂiahm, rll bꢄaeꢃ rꢂe ꢁꢂpgꢂrmmed ap 00h befpꢂe eꢂrꢃsꢂe.
5. Sꢄꢃaem-level pveꢂherd iꢃ ahe aime ꢂeqsiꢂed ap execsae ahe fpsꢂ-bsꢃ-cꢄcle cpmmrnd ꢃeqsence fpꢂ ꢁꢂpgꢂrmming. See Trble 4 fpꢂ fsꢂaheꢂ
infpꢂmraipn pn cpmmrnd definiaipnꢃ.
6. The device hrꢃ r minimsm gsrꢂrnaeed eꢂrꢃe cꢄcle endsꢂrnce pf ± millipn cꢄcleꢃ.
LATCHUP CHARACTERISTIC
PARAMETER
MIN
MAX
V + 1.0V
CC
Input voltage with respect to V on I/O pins
-1.0V
SS
V
Current
-100mA
+100mA
CC
NOTES: Inclsdeꢃ rll ꢁinꢃ exceꢁa VCC
.
Teꢃa cpndiaipnꢃ: VCC = 5.0V, pne ꢁin ra r aime.
PIN CAPACITANCE
PARAMETER
CONDITIONS SYMBOL
= 0
MAX
UNIT
Input Capacitance
V
C
15
pF
IN
IN
Output Capacitance
V
= 0
C
15
15
pF
pF
OUT
OUT
Control Pin Capacitance
V
= 0
C
IN2
PP
NOTES:
±. Srmꢁled, npa ±00ꢀ aeꢃaed.
2. Teꢃa cpndiaipnꢃ TA = 25°C, f = ±.0 MHz
DATARETENTION
PARAMETER
CONDITIONS
150°C
MIN
10
20
UNIT
Years
Years
Minimum Pattern Data Retention Time
125°C
AS29F010
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 2.3 12/08
19
AUSTIN [ AUSTIN SEMICONDUCTOR ]
