ATmega48/88/168
Figure 7-4. On-chip Data SRAM Access Cycles
T1
T2
T3
clkCPU
Address valid
Compute Address
Address
Data
WR
Data
RD
Memory Access Instruction
Next Instruction
7.4
EEPROM Data Memory
The ATmega48/88/168 contains 256/512/512 bytes of data EEPROM memory. It is organized
as a separate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
“Memory Programming” on page 286 contains a detailed description on EEPROM Programming
in SPI or Parallel Programming mode.
7.4.1
EEPROM Read/Write Access
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 7-2. A self-timing function, however,
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, VCC is likely to rise or fall slowly on power-up/down. This causes the device for some
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See “Preventing EEPROM Corruption” on page 21 for details on how to avoid problems in these
situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
7.4.2
Preventing EEPROM Corruption
During periods of low VCC, the EEPROM data can be corrupted because the supply voltage is
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
21
2545M–AVR–09/07
ATMEL [ ATMEL ]
