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ATMEGA8-16AI 参数 Datasheet PDF下载

ATMEGA8-16AI图片预览
型号: ATMEGA8-16AI
PDF下载: 下载PDF文件 查看货源
内容描述: 位的AVR微控制器8K字节在 - 系统内可编程Flash [-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash]
分类和应用: 微控制器
文件页数/大小: 303 页 / 5122 K
品牌: ATMEL [ ATMEL ]
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ATmega8(L)  
Low:> 2 CPU clock cycles for fck < 12 MHz, 3 CPU clock cycles for fck 12 MHz  
High:> 2 CPU clock cycles for fck < 12 MHz, 3 CPU clock cycles for fck 12 MHz  
Serial Programming  
Algorithm  
When writing serial data to the ATmega8, data is clocked on the rising edge of SCK.  
When reading data from the ATmega8, data is clocked on the falling edge of SCK. See  
Figure 113 for timing details.  
To program and verify the ATmega8 in the Serial Programming mode, the following  
sequence is recommended (See four byte instruction formats in Table 98):  
1. Power-up sequence:  
Apply power between VCC and GND while RESET and SCK are set to “0”. In  
some systems, the programmer can not guarantee that SCK is held low during  
Power-up. In this case, RESET must be given a positive pulse of at least two  
CPU clock cycles duration after SCK has been set to “0”.  
2. Wait for at least 20 ms and enable Serial Programming by sending the Program-  
ming Enable serial instruction to pin MOSI.  
3. The Serial Programming instructions will not work if the communication is out of  
synchronization. When in sync. the second byte (0x53), will echo back when  
issuing the third byte of the Programming Enable instruction. Whether the echo  
is correct or not, all four bytes of the instruction must be transmitted. If the 0x53  
did not echo back, give RESET a positive pulse and issue a new Programming  
Enable command.  
4. The Flash is programmed one page at a time. The page size is found in Table 93  
on page 224. The memory page is loaded one byte at a time by supplying the 5  
LSB of the address and data together with the Load Program memory Page  
instruction. To ensure correct loading of the page, the data Low byte must be  
loaded before data High byte is applied for a given address. The Program mem-  
ory Page is stored by loading the Write Program memory Page instruction with  
the 7 MSB of the address. If polling is not used, the user must wait at least  
tWD_FLASH before issuing the next page. (See Table 97).  
Note: If other commands than polling (read) are applied before any write operation  
(FLASH, EEPROM, Lock Bits, Fuses) is completed, it may result in incorrect  
programming.  
5. The EEPROM array is programmed one byte at a time by supplying the address  
and data together with the appropriate Write instruction. An EEPROM memory  
location is first automatically erased before new data is written. If polling is not  
used, the user must wait at least tWD_EEPROM before issuing the next byte. (See  
Table 97). In a chip erased device, no 0xFFs in the data file(s) need to be  
programmed.  
6. Any memory location can be verified by using the Read instruction which returns  
the content at the selected address at serial output MISO.  
7. At the end of the programming session, RESET can be set high to commence  
normal operation.  
8. Power-off sequence (if needed):  
Set RESET to “1”.  
Turn VCC power off  
233  
2486M–AVR–12/03  
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