ATmega32(L)
Programming the EEPROM
The EEPROM is organized in pages, see Table 107 on page 259. When programming
the EEPROM, the program data is latched into a page buffer. This allows one page of
data to be programmed simultaneously. The programming algorithm for the EEPROM
data memory is as follows (refer to “Programming the Flash” on page 262 for details on
Command, Address and Data loading):
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte ($00 - $FF)
3. B: Load Address Low Byte ($00 - $FF)
4. C: Load Data ($00 - $FF)
5. E: Latch data (give PAGEL a positive pulse)
K: Repeat 3 through 5 until the entire buffer is filled
L: Program EEPROM page
1. Set BS1 to “0”.
2. Give WR a negative pulse. This starts programming of the EEPROM page.
RDY/BSY goes low.
3. Wait until to RDY/BSY goes high before programming the next page. (See Figure
130 for signal waveforms)
Figure 130. Programming the EEPROM Waveforms
K
A
G
B
C
E
B
C
E
L
0x11
ADDR. HIGH ADDR. LOW
DATA
ADDR. LOW
DATA
XX
XX
DATA
XA1
XA0
BS1
XTAL1
WR
RDY/BSY
RESET +12V
OE
PAGEL
BS2
Reading the Flash
The algorithm for reading the Flash memory is as follows (refer to “Programming the
Flash” on page 262 for details on Command and Address loading):
1. A: Load Command “0000 0010”.
2. G: Load Address High Byte ($00 - $FF)
3. B: Load Address Low Byte ($00 - $FF)
4. Set OE to “0”, and BS1 to “0”. The Flash word low byte can now be read at DATA.
5. Set BS1 to “1”. The Flash word high byte can now be read at DATA.
265
2503J–AVR–10/06
ATMEL [ ATMEL ]
