Group D commands consist of:
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands, any command in Group C can be executed. The Group B commands using buffer 1
should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-
timed portion of a Group D command, only the Status Register Read command should be
executed.
15. Command Tables
Table 15-1. Read Commands
Command
Opcode
D2H
E8H
Main Memory Page Read
Continuous Array Read (Legacy Command)
Continuous Array Read (Low Frequency)
Continuous Array Read (High Frequency)
Buffer 1 Read (Low Frequency)
Buffer 2 Read (Low Frequency)
Buffer 1 Read
03H
0BH
D1H
D3H
D4H
D6H
Buffer 2 Read
Table 15-2. Program and Erase Commands
Command
Opcode
Buffer 1 Write
84H
Buffer 2 Write
87H
Buffer 1 to Main Memory Page Program with Built-in Erase
Buffer 2 to Main Memory Page Program with Built-in Erase
Buffer 1 to Main Memory Page Program without Built-in Erase
Buffer 2 to Main Memory Page Program without Built-in Erase
Page Erase
83H
86H
88H
89H
81H
Block Erase
50H
Sector Erase
7CH
Chip Erase
C7H, 94H, 80H, 9AH
Main Memory Page Program Through Buffer 1
Main Memory Page Program Through Buffer 2
82H
85H
28
AT45DB321D
3597N–DFLASH–04/09
ATMEL [ ATMEL ]
