Table 18-3.
Symbol
I
DP
I
SB
DC Characteristics
Parameter
Deep Power-down Current
Standby Current
Condition
CS, RESET, WP = V
IH
, all
inputs at CMOS levels
CS, RESET, WP = V
IH
, all
inputs at CMOS levels
f = 20 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
Active Current, Read
Operation
f = 33 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
f = 50 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
f = 66 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
Min
Typ
15
25
7
8
10
11
12
Max
25
50
10
12
14
15
17
1
1
V
CC
x 0.3
V
CC
x 0.7
I
OL
= 1.6 mA; V
CC
= 2.7V
I
OH
= -100 µA
V
CC
- 0.2V
0.4
Units
µA
µA
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
I
CC1(1)
I
CC2
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Notes:
Active Current, Program/Erase
Operation
Input Load Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
= 3.6V
V
IN
= CMOS levels
V
I/O
= CMOS levels
1. I
CC1
during a buffer read is 20 mA maximum @ 20 MHz.
2.
All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design to be 5-Volt tolerant.
34
AT45DB161D
3500M–DFLASH–04/09
ATMEL [ ATMEL CORPORATION ]
