AT90S1200
Serial Programming
Characteristics
Figure 36. Serial Programming Timing
MOSI
tOVSH
tSLSH
tSHOX
SCK
tSHSL
MISO
tSLIV
Table 20. Serial Programming Characteristics, TA = -40°C to 85°C, VCC = 2.7 - 6.0V
(unless otherwise noted)
Symbol
1/tCLCL
tCLCL
Parameter
Min
0
Typ
Max
Units
MHz
ns
Oscillator Frequency (VCC = 2.7 - 4.0V)
Oscillator Period (VCC = 2.7 - 4.0V)
Oscillator Frequency (VCC = 4.0 - 6.0V)
Oscillator Period (VCC = 4.0 - 6.0V)
SCK Pulse Width High
4.0
250.0
0
1/tCLCL
tCLCL
12.0
MHz
ns
83.3
tSHSL
4.0 tCLCL
tCLCL
ns
tSLSH
SCK Pulse Width Low
ns
tOVSH
tSHOX
tSLIV
MOSI Setup to SCK High
1.25 tCLCL
2.5 tCLCL
10.0
ns
MOSI Hold after SCK High
SCK Low to MISO Valid
ns
16.0
32.0
ns
Table 21. Minimum Wait Delay after the Chip Erase Instruction
Symbol
3.2V
3.6V
4.0V
12 ms
5.0V
tWD_ERASE
18 ms
14 ms
8 ms
Table 22. Minimum Wait Delay after Writing a Flash or EEPROM Location
Symbol
3.2V
3.6V
4.0V
5.0V
tWD_PROG
9 ms
7 ms
6 ms
4 ms
47
0838H–AVR–03/02