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5962-9161706QZC 参数 Datasheet PDF下载

5962-9161706QZC图片预览
型号: 5962-9161706QZC
PDF下载: 下载PDF文件 查看货源
内容描述: 弧度。宽容高速8 KB ×16双端口RAM [Rad. Tolerant High Speed 8 Kb x 16 Dual Port RAM]
分类和应用:
文件页数/大小: 27 页 / 528 K
品牌: ATMEL [ ATMEL ]
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M67025E  
Timing Waveform of Write  
Cycle number 1, R/W  
Controlled Timing (1) (2) (3) (7  
Timing Waveform of Write  
Cycle number 2, CS  
Controlled Timing (1) (2) (3) (5)  
Notes: 1. R/WC or CS must be high during all address transitions.  
2. A write occurs during the overlap (tSW or tWP) of a low CS or SEM and a low R/W.  
3. tWR is measured from the earlier of CS or R/W (or SEM or R/W) going high to the end of write cycle.  
4. During this period, the I/O pins are in the output state, and input signals must not be applied.  
5. If the CS or SEM low transition occurs simultaneously with or after the R/W low transition, the outputs remain in the high  
impedance state.  
6. Transition is measured ± 500 mV from steady state with a 5 pF load (including scope and jig).This parameter is sampled and  
not 100% tested.  
7. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O  
drivers to turn off and data to be placed on the bus for the required tDW. If OE is high during an R/W controlled write cycle,  
this requirement does not apply and the write pulse can be as short as the specified tWP  
.
8. To access RAM, CS = VIL. SEM = VIH.  
9. To access upper byte CS = VIL, UB = VIL, SEM = VIH.  
To access lower byte CS = VIL, LB = VIL, SEM = VIH.  
16  
4146J–AERO–06/03  
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