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5962-9161706QZC 参数 Datasheet PDF下载

5962-9161706QZC图片预览
型号: 5962-9161706QZC
PDF下载: 下载PDF文件 查看货源
内容描述: 弧度。宽容高速8 KB ×16双端口RAM [Rad. Tolerant High Speed 8 Kb x 16 Dual Port RAM]
分类和应用:
文件页数/大小: 27 页 / 528 K
品牌: ATMEL [ ATMEL ]
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AC Busy Characteristics  
Table 9. AC Electrical Characteristics  
Over the Full Operating Temperature and Supply Voltage Range  
M
M
67025-30  
67025-45  
Write Cycle  
Parameter  
Min.  
Max.  
Min.  
Max.  
Unit  
Busy Timing (For Master 67025 only)  
BUSY Access time  
to address  
tBAA  
30  
25  
25  
20  
35  
30  
30  
25  
ns  
ns  
ns  
ns  
BUSY Disable time  
to address  
tBDA  
BUSY Access time  
to Chip Select  
tBAC  
BUSY Disable time  
to Chip Select  
tBDC  
tWDD  
tDDD  
tAPS  
tBDD  
tWB  
Write Pulse to data Delay (1)  
55  
40  
70  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write data valid to read data delay(1)  
Arbitration priority set-up time (2)  
BUSY disable to valid data  
Write to BUSY input (4)  
5
5
(3)  
(3)  
0
0
tWH  
Write hold after BUSY (5)  
20  
25  
tWDD  
tDDD  
Write pulse to data delay (6)  
Write data valid to read data delay(6)  
55  
40  
70  
55  
1.  
Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveform of Read with BUSY (For Mas-  
ter 67025 only)’.  
2.  
3.  
4.  
5.  
6.  
To ensure that the earlier of the two ports wins.  
t
BDD is a calculated parameter and is the greater of 0, tWDD - tWP (actual) to tDDD - tDW (actual).  
To ensure that the write cycle is inhibited during contention.  
To ensure that a write cycle is completed after contention.  
Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveforms of Read with Port-to-port  
delay (For Slave, 67025 only)’.  
17  
M67025E  
4146J–AERO–06/03  
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