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5962-0520802QYC 参数 Datasheet PDF下载

5962-0520802QYC图片预览
型号: 5962-0520802QYC
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射512K ×8的超低功耗CMOS SRAM [Rad Hard 512K x 8 Very Low Power CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器异步传输模式ATM
文件页数/大小: 13 页 / 347 K
品牌: ATMEL [ ATMEL CORPORATION ]
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Figure 5.
Write Cycle 3. CS Controlled
(1)
E
Note:
The internal write time of the memory is defined by the overlap of CS Low and W LOW. Both signals must be activated to initiate
a write and either signal can terminate a write by going in active mode. The data input setup and hold timing should be refer-
enced to the active edge of the signal that terminates the write.
Data out is high impedance if OE= V
IH
.
9
AT60142F
4408G–AERO–04/09