欢迎访问ic37.com |
会员登录 免费注册
发布采购

5962-0520802QYC 参数 Datasheet PDF下载

5962-0520802QYC图片预览
型号: 5962-0520802QYC
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射512K ×8的超低功耗CMOS SRAM [Rad Hard 512K x 8 Very Low Power CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器异步传输模式ATM
文件页数/大小: 13 页 / 347 K
品牌: ATMEL [ ATMEL CORPORATION ]
 浏览型号5962-0520802QYC的Datasheet PDF文件第4页浏览型号5962-0520802QYC的Datasheet PDF文件第5页浏览型号5962-0520802QYC的Datasheet PDF文件第6页浏览型号5962-0520802QYC的Datasheet PDF文件第7页浏览型号5962-0520802QYC的Datasheet PDF文件第9页浏览型号5962-0520802QYC的Datasheet PDF文件第10页浏览型号5962-0520802QYC的Datasheet PDF文件第11页浏览型号5962-0520802QYC的Datasheet PDF文件第12页  
AT60142F
Write Cycle
Symbol
TAVAW
TAVWL
TAVWH
TDVWH
TELWH
TWLQZ
TWLWH
TWHAX
TWHDX
TWHQX
Notes:
Parameter
Write cycle time
Address set-up time
Address valid to end of write
Data set-up time
CS low to write end
Write low to high Z
(1)
Write pulse width
Address hold from end of write
Data hold time
Write high to low Z
(1)
AT60142F-15
15
0
8
7
12
6
8
0
0
3
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Value
min
min
min
min
min
max
min
min
min
min
1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.)
Figure 3.
Write Cycle 1. WE Controlled, OE High During Write
E
Figure 4.
Write Cycle 2. WE Controlled, OE Low
E
8
4408G–AERO–04/09