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29C020 参数 Datasheet PDF下载

29C020图片预览
型号: 29C020
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位256K ×8 5伏只有CMOS闪存 [2-Megabit 256K x 8 5-volt Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 11 页 / 260 K
品牌: ATMEL [ ATMEL ]
 浏览型号29C020的Datasheet PDF文件第1页浏览型号29C020的Datasheet PDF文件第2页浏览型号29C020的Datasheet PDF文件第3页浏览型号29C020的Datasheet PDF文件第4页浏览型号29C020的Datasheet PDF文件第6页浏览型号29C020的Datasheet PDF文件第7页浏览型号29C020的Datasheet PDF文件第8页浏览型号29C020的Datasheet PDF文件第9页  
AT29C020  
AC Read Characteristics  
AT29C020-90 AT29C020-10 AT29C020-12 AT29C020-15  
Min  
Max  
90  
90  
40  
25  
Min  
Max  
100  
100  
50  
Min  
Max  
120  
120  
50  
Min  
Max  
150  
150  
70  
Symbol Parameter  
Units  
ns  
t
t
t
t
Address to Output Delay  
CE to Output Delay  
0
ACC  
(1)  
ns  
CE  
OE  
DF  
(2)  
OE to Output Delay  
0
0
0
0
0
0
0
0
ns  
(3, 4)  
CE or OE to Output Float  
25  
30  
40  
ns  
Output Hold from OE, CE or  
Address, whichever  
occurred first  
t
0
0
0
0
ns  
OH  
AC Read Waveforms (1, 2, 3, 4)  
Notes: 1. CE may be delayed up to tACC - tCE after the address  
transition without impact on tACC  
3. tDF is specified from OE or CE whichever occurs first  
(CL = 5 pF).  
.
2. OE may be delayed up to tCE - tOE after the falling  
edge of CE without impact on tCE or by tACC - tOE  
4. This parameter is characterized and is not 100% tested.  
after an address change without impact on tACC  
.
Output Test Load  
Input Test Waveforms and Measurement Level  
t , t < 5 ns  
R
F
Note: While CE is active, any address inputs that cause VIH to drop  
below 2.0V or VIL to rise above 0.8V for a duration of up to 15 ns  
may cause the device to read incorrectly.  
Pin Capacitance (f = 1 MHz, T = 25°C) (1)  
Typ  
Max  
6
Units  
pF  
Conditions  
C
C
4
8
V
V
= 0V  
IN  
IN  
12  
pF  
= 0V  
OUT  
OUT  
Note: 1. This parameter is characterized and is not 100% tested.  
5
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