AOZ9004B
Typical Performance Characteristics
On-Regions Characteristics
Transfer Characteristics
30
20
15
10
5
2.5V
10V
3V
25
4V
20
15
VDD=2V
10
5
0
0
01
2
3
45
00
.5
11
.5
22
.5
VDS (Volts)
VDD (Volts)
On-Resistance vs. Junction Temperature
On-Resistance vs. Drain Current and Gate Voltage
70
1.8
60
VDD=4.5V
1.6
VDD=2.5V
ID=6A
50
1.4
40
VDD=2.5V
ID=3A
V
DD=4.5V
30
20
10
0
1.2
1
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Body-Diode Characteristics
On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
120
125°C
ID=3A
100
25°C
80
60
40
20
0
125°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VDD (Volts)
VSD (Volts)
Rev. 1.2 August 2008
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Page 8 of 17
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
