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AOZ9004BI-04 参数 Datasheet PDF下载

AOZ9004BI-04图片预览
型号: AOZ9004BI-04
PDF下载: 下载PDF文件 查看货源
内容描述: 单节电池保护IC ,内置MOSFET [Single-Cell Battery Protection IC with Integrated MOSFET]
分类和应用: 电池
文件页数/大小: 17 页 / 551 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
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AOZ9004B  
Electrical Characteristics (Continued)  
TA = 25°C unless otherwise specified. Parameters specified over TA = -40°C to +85°C are guaranteed by design only and not  
production tested.  
Symbol  
Parameter  
Condition  
Min.  
Typ.  
Max.  
Unit  
INPUT CURRENT (Shutdown Function)  
I
I
Current Consumption During  
Operation  
V
= 3.5V, V = 0V  
1.0  
0.7  
3.0  
3.0  
5.5  
6.0  
0.2  
0.3  
µA  
µA  
OPE  
DD  
VM  
T = -40°C to +85°C  
A
Current Consumption at  
Shutdown  
V
= V = 1.5V  
DD VM  
PDN  
T = -40°C to +85°C  
A
INTEGRATED MOSFET  
BV  
Charge Control MOSFET  
Drain-Source Breakdown Volt-  
age  
V
= V  
30  
30  
V
DS_C  
DD  
CU  
I
Charge Control MOSFET  
Leakage Current  
V
V
= V  
= V  
1
µA  
V
LEAK_C  
DD  
DD  
CU  
BV  
Discharge Control MOSFET  
Drain-Source Breakdown  
Voltage  
DS_D  
DL  
I
Discharge Control MOSFET  
Leakage Current  
V
V
= V  
1
µA  
LEAK_D  
DD  
DD  
DL  
R
Total Output Resistance  
(OUTM to VSS)  
= 3.5V, I  
= 1.5A  
40  
48  
mꢀ  
SS  
OUT  
DETECTION DELAY TIME (Combination 2 per Table 1)  
t
Overcharge Detection Delay  
Time  
T = 25°C  
0.96  
0.7  
120  
83  
1.2  
1.2  
150  
150  
9
1.4  
2
s
CU  
A
T = -40°C to +85°C  
A
t
Over-Discharge Detection Delay  
Time  
T = 25°C  
180  
255  
11  
ms  
ms  
ms  
µs  
DL  
A
T = -40°C to +85°C  
A
t
t
Discharge Over-Current  
Detection Delay Time  
T = 25°C  
7.2  
5
DIOV  
A
T = -40°C to +85°C  
9
15  
A
Charge Over-Current Detection  
Delay Time  
T = 25°C  
7.2  
5
9
11  
CIOV  
A
T = -40°C to +85°C  
9
15  
A
t
Load Short-Circuiting  
Detection Delay Time  
T = 25°C  
240  
150  
300  
300  
360  
540  
SHORT  
A
T = -40°C to +85°C  
A
DETECTION DEALY TIME (Combination 5 per Table 1)  
t
Overcharge Detection Delay  
Time  
T = 25°C  
0.96  
0.7  
30  
1.2  
1.2  
38  
38  
9
1.4  
2
s
CU  
A
T = -40°C to +85°C  
A
t
Over-Discharge Detection Delay  
Time  
T = 25°C  
46  
65  
11  
ms  
ms  
ms  
µs  
DL  
A
T = -40°C to +85°C  
20  
A
t
t
Discharge Over-Current  
Detection Delay Time  
T = 25°C  
7.2  
5
DIOV  
A
T = -40°C to +85°C  
9
15  
11  
A
Charge Over-Current Detection  
Delay Time  
T = 25°C  
7.2  
5
9
CIOV  
A
T = -40°C to +85°C  
9
15  
360  
540  
A
t
Load Short-Circuiting  
Detection Delay Time  
T = 25°C  
240  
150  
300  
300  
SHORT  
A
T = -40°C to +85°C  
A
Rev. 1.2 August 2008  
www.aosmd.com  
Page 6 of 17