AOZ9004B
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified. Parameters specified over TA = -40°C to +85°C are guaranteed by design only and not
production tested.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
INPUT CURRENT (Shutdown Function)
I
I
Current Consumption During
Operation
V
= 3.5V, V = 0V
1.0
0.7
3.0
3.0
5.5
6.0
0.2
0.3
µA
µA
OPE
DD
VM
T = -40°C to +85°C
A
Current Consumption at
Shutdown
V
= V = 1.5V
DD VM
PDN
T = -40°C to +85°C
A
INTEGRATED MOSFET
BV
Charge Control MOSFET
Drain-Source Breakdown Volt-
age
V
= V
30
30
V
DS_C
DD
CU
I
Charge Control MOSFET
Leakage Current
V
V
= V
= V
1
µA
V
LEAK_C
DD
DD
CU
BV
Discharge Control MOSFET
Drain-Source Breakdown
Voltage
DS_D
DL
I
Discharge Control MOSFET
Leakage Current
V
V
= V
1
µA
LEAK_D
DD
DD
DL
R
Total Output Resistance
(OUTM to VSS)
= 3.5V, I
= 1.5A
40
48
mꢀ
SS
OUT
DETECTION DELAY TIME (Combination 2 per Table 1)
t
Overcharge Detection Delay
Time
T = 25°C
0.96
0.7
120
83
1.2
1.2
150
150
9
1.4
2
s
CU
A
T = -40°C to +85°C
A
t
Over-Discharge Detection Delay
Time
T = 25°C
180
255
11
ms
ms
ms
µs
DL
A
T = -40°C to +85°C
A
t
t
Discharge Over-Current
Detection Delay Time
T = 25°C
7.2
5
DIOV
A
T = -40°C to +85°C
9
15
A
Charge Over-Current Detection
Delay Time
T = 25°C
7.2
5
9
11
CIOV
A
T = -40°C to +85°C
9
15
A
t
Load Short-Circuiting
Detection Delay Time
T = 25°C
240
150
300
300
360
540
SHORT
A
T = -40°C to +85°C
A
DETECTION DEALY TIME (Combination 5 per Table 1)
t
Overcharge Detection Delay
Time
T = 25°C
0.96
0.7
30
1.2
1.2
38
38
9
1.4
2
s
CU
A
T = -40°C to +85°C
A
t
Over-Discharge Detection Delay
Time
T = 25°C
46
65
11
ms
ms
ms
µs
DL
A
T = -40°C to +85°C
20
A
t
t
Discharge Over-Current
Detection Delay Time
T = 25°C
7.2
5
DIOV
A
T = -40°C to +85°C
9
15
11
A
Charge Over-Current Detection
Delay Time
T = 25°C
7.2
5
9
CIOV
A
T = -40°C to +85°C
9
15
360
540
A
t
Load Short-Circuiting
Detection Delay Time
T = 25°C
240
150
300
300
SHORT
A
T = -40°C to +85°C
A
Rev. 1.2 August 2008
www.aosmd.com
Page 6 of 17
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
