AON7405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
VDS=-15V
ID=-20A
3500
3000
2500
2000
1500
1000
500
8
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
400
350
300
250
200
150
100
50
10µs
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
100µs
limited
17
5
1ms
DC
2
10
0.1
TJ(Max)=150°C
TC=25°C
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
0
Pulse Width (s)
Figure 10: Single Pulse Power Rating J1u8nction-to-
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
40
0.1
0.01
PD
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Feb 2010
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
