AON7405
30V P-Channel MOSFET
General Description
The AON7405 uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge.
This device is ideal for load switch and battery protection
applications.
Product Summary
V
DS
I
D
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -6V)
-30V
-50A
< 6.2mΩ
< 8.9mΩ
100% UIS Tested
100% R
g
Tested
DFN 3.3x3.3 EP
Top View
Bottom
Pin 1
Top View
1
2
3
4
8
7
6
5
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
-30
±25
-50
-39
-210
-25
-20
-44
97
83
33
6.25
4
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
, I
AS
E
AR
, E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16
45
1.1
Max
20
55
1.5
Units
°
C/W
°
C/W
°
C/W
Rev 1: Feb 2010
www.aosmd.com
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