AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-20A
1500
8
-V
GS
(Volts)
I
D
=-10mA, V
GS
=0V
Capacitance (pF)
1250
C
iss
1000
750
500
C
rss
250
0
C
oss
6
4
2
0
0
3
6
9
12
15
18
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
R
DS(ON)
limited
DC
200
160
Power (W)
120
80
40
0
0.0001
850
185
90
10µs
100µs
T
J(Max)
=175°C
T
C
=25°C
T
J(Max)
=175°C
T
C
=25°C
0.1
1
V
DS
(Volts)
10
100
0.001
0.01
0.1
1
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
0.01
0.00001
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
