AOD417
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD417 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD417 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V
DS
(V) = -30V
(V
GS
= -10V)
I
D
= -25A
R
DS(ON)
< 34mΩ (V
GS
= -10V)
R
DS(ON)
< 55mΩ (V
GS
= -4.5V)
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-30
±20
-25
-20
-60
-14
30
50
25
5
3.2
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
A
=25°C
G
T
A
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
D
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
16.7
40
2.5
Max
25
50
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
