AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
-10V
50
40
-I
D
(A)
30
20
10
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
60
Normalized On-Resistance
55
50
R
DS(ON)
(m
Ω
)
45
40
35
30
25
20
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
I
D
=-20A
70
60
R
DS(ON)
(m
Ω
)
50
40
30
20
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
1.0E+00
1.0E-01
-I
S
(A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
-40°C
1.0E+01
V
GS
=-10V
V
GS
=-4.5V
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=-10V
I
D
=-20A
-6V
I
D
=-10mA,
25
V
DS
=-5V
V
GS
=0V
20
-4.5V
-I
D
(A)
V
GS
=-3.5V
15
10
125°C
5
25°C
-40°C
2.5
3
3.5
4
4.5
5
0
1
1.5
2
-V
GS
(Volts)
Figure 2: Transfer Characteristics
850
185
90
V
GS
=-4.5V
I
D
=-7A
125°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
