欢迎访问ic37.com |
会员登录 免费注册
发布采购

AO8830_10 参数 Datasheet PDF下载

AO8830_10图片预览
型号: AO8830_10
PDF下载: 下载PDF文件 查看货源
内容描述: 常见的漏双N沟道增强型场效应晶体管 [Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 200 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO8830_10的Datasheet PDF文件第1页浏览型号AO8830_10的Datasheet PDF文件第2页浏览型号AO8830_10的Datasheet PDF文件第3页浏览型号AO8830_10的Datasheet PDF文件第5页  
AO8830  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
400  
5
VDS=10V  
Ciss  
ID=6A  
4
3
2
1
0
300  
200  
100  
0
Coss  
Crss  
0
5
10  
15  
20  
0
1
2
3
4
5
6
VDS(Volts)  
Qg (nC)  
Figure 8: Capacitance Characteristics  
Figure 7: Gate-Charge Characteristics  
30  
100  
10  
1
TJ(Max)=150°C, TA=25°C  
TJ(Max)=150°C  
TA=25°C  
25  
20  
15  
10  
5
10µs  
1ms  
10ms  
DC  
RDS(ON)  
100ms  
limited  
10s  
0
0.1  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
Pulse Width (s)  
VDS (Volts)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
1
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=83°C/W  
PD  
0.1  
Ton  
T
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
 复制成功!