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AO8830_10 参数 Datasheet PDF下载

AO8830_10图片预览
型号: AO8830_10
PDF下载: 下载PDF文件 查看货源
内容描述: 常见的漏双N沟道增强型场效应晶体管 [Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 200 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO8830_10的Datasheet PDF文件第1页浏览型号AO8830_10的Datasheet PDF文件第2页浏览型号AO8830_10的Datasheet PDF文件第4页浏览型号AO8830_10的Datasheet PDF文件第5页  
AO8830  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
30  
30  
20  
10  
0
10V  
3V  
4V  
VGS=5V  
25°C  
25  
20  
15  
10  
5
VGS =2V  
125°C  
VGS =1.5V  
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VDS(Volts)  
VGS(Volts)  
Figure 2: Transfer Characteristics  
Figure 1: On-Regions Characteristics  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
60  
50  
40  
30  
20  
10  
0
VGS=4.5V  
VGS=2.5V  
VGS =1.8V  
ID=5A  
ID=4A  
VGS =2.5V  
VGS=10V  
ID=6A  
VGS=1.8V  
ID=2A  
VGS =10V  
VGS =4.5V  
0
5
10  
ID(A)  
15  
20  
-50  
0
50  
Temperature (°C)  
100  
150  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage  
Figure 4: On-Resistance vs. Junction  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
1E+01  
1E+00  
1E-01  
1E-02  
1E-03  
1E-04  
1E-05  
ID=6A  
125°C  
125°C  
25°C  
25°C  
0.0  
0.2  
0.4  
SD(Volts)  
Figure 6: Body-Diode Characteristics  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
V
VGS(Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
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