AO8830
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AO8830/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is suitable
for use as a uni-directional or bi-directional load
switch, facilitated by its common-drain configuration.
AO8830 and AO8830L are electrically identical.
-RoHs Compliant
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 37mΩ (VGS = 3.1V)
RDS(ON) < 41mΩ (VGS = 2.5V)
RDS(ON) < 55mΩ (VGS = 1.8V)
-AO8830L is Halogen Free
ESD PROTECTED!
D2
D1
TSSOP8
TSSOP-8
Top View
Top View
Bottom View
1.6K
1.6K
G1
G2
1
2
3
4
8
7
6
5
D1/D2
S1
D1/D2
S2
S2
S1
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
6
V
A
TA=25°C
TA=70°C
ID
4.8
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
1.5
PD
W
Power Dissipation A
0.94
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
64
Max
83
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
115
70
140
85
RθJL
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
