AO6605
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
-4.5V
-8V
10
-I
D
(A)
-I
D
(A)
-2.0V
-3.0V
-2.5V
4
6
V
DS
=-5V
5
2
V
GS
=-1.5V
125°C
25°C
0
0
2
3
4
-V
DS
(Volts)
Fig 1: On-Region Characteristics
1
5
0
0
1
1.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
0.5
2
200
V
GS
=-1.8V
R
DS(ON)
(m
Ω
)
150
V
GS
=-2.5V
100
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
2
4
6
0
25
50
75
100
125
150
175
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
1E+00
I
D
=-2.5A
I
D
=-2.5A
V
GS
=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
V
GS
=-4.5V
50
200
R
DS(ON)
(m
Ω
)
150
-I
S
(A)
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
125°C
100
25°C
50
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
