AO6605
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
3.0V
4
2
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
500
V
GS
=1.8V
Normalized On-Resistance
450
400
R
DS(ON)
(m
Ω
)
350
300
250
200
150
100
0
1
2
3
4
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
600
500
400
300
200
100
0
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
S
(A)
I
D
=1.9A
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
0.0
0.5
1.0
1.5
2.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
V
GS
=2.5V
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=1.8V
I
D
=1.3A
2.5V
1
V
GS
=2.0V
0
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
8.0V
5.0V
4.0V
I
D
(A)
I
D
(A)
3
4
V
DS
=5V
2
125°C
V
GS
=2.5V
I
D
=1.6A
V
GS
=4.5V
I
D
=1.9A
125°C
Alpha & Omega Semiconductor, Ltd.
R
DS(ON)
(m
Ω
)
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
