AO6605
P-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-2.5A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-2.5V, I
D
=-2A
V
GS
=-1.8V, I
D
=-1A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=-5V, I
D
=-3A
4
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
-0.3
-15
81
111
108
146
6
-0.78
-1
-2
540
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
72
49
15
6.1
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2.5A
0.6
1.6
12
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.9Ω,
R
GEN
=3Ω
I
F
=-2.5A, dI/dt=100A/µs
15
49
27
22
16
26
19.5
7.5
700
97
135
130
190
-0.55
Min
-20
-1
-5
±100
-1
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2.5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
A: The value any
θJA
is measured with the device mountedspecific
2
board board with 2oz. Copper, in is based on the t
≤
10s thermal
The value in of R given application depends on the user's on 1in FR-4 design. The current rating a still air environment with T
A
=25°C.
resistance rating.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
B: Repetitive rating, pulse width limited by junction temperature.
resistance rating.
B: Repetitive is the sum of width limitedimpedence from junction to lead R
θJL
and lead to ambient.
C. The R
θJA
rating, pulse the thermal by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction tousing R
θJL
and lead duty cycle 0.5% max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained lead 80
µs
pulses, to ambient.
D. The static characteristics in with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
E. These tests are performed Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed pulsethe device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single with rating.
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS I
N LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS
OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha
& Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
