AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1500
V
DS
=15V
I
D
=8.5A
Capacitance (pF)
1250
1000
750
500
C
rss
250
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
f=1MHz
V
GS
=0V
100.0
T
J(Max)
=150°C, T
A
=25°C
R
DS(ON)
limited
100µs
10µs
Power (W)
40
1040
180
110
0.7
30
T
J(Max)
=150°C
T
A
=25°C
10.0
I
D
(A)
1ms
10ms
0.1s
20
1.0
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω, R
GEN
=3Ω
1s
10s
DC
10
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
